簡介
PLD-T
多功能脈衝雷射沉積和熱蒸鍍系統 - PLD-T 是一種高真空薄膜沉積系統,可通過脈衝雷射沉積和熱蒸鍍技術沉積不同的材料。它可以將復雜的材料和晶體結構沉積到基底上,只需很少的設置。
脈衝類射沉積技術可實現高效率、非熱消熔,並保持目標材料的化學計量。通過應用這種方法,可以沉積氮化物、氧化物、超晶格、聚合物和復合材料等材料。
多功能脈衝雷射沉積和熱蒸鍍系統 - PLD-T 是一種高真空薄膜沉積系統,可通過脈衝雷射沉積和熱蒸鍍技術沉積不同的材料。它可以將復雜的材料和晶體結構沉積到基底上,只需很少的設置。 脈衝類射沉積技術可實現高效率、非熱消熔,並保持目標材料的化學計量。通過應用這種方法,可以沉積氮化物、氧化物、超晶格、聚合物和復合材料等材料。 |
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特點
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熱蒸鍍源(舟型/籃型/線圈) 脈衝雷射沉積系統可配備三個獨立的熱電阻式熱蒸鍍源。蒸鍍源支架的良好設計不會導致污染從來源材料轉移到其它材料上。來源材料的支架的長度可在 5-10 cm範圍內調節,以滿足客戶的要求。 |
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靶操縱器 PLD 配備了一個多靶操縱器,其中包括三個直徑為 2 厘米的靶。所有的靶材尺寸都是為標準尺寸。同時,所有的靶操縱器都是電動的,包括靶的旋轉。 |
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泵壓速率 | 90 l/s 350 l/s |
極限壓力 | 7 x10-6 Torr 7×10-7 Torr |
Versatile Pulsed Laser Deposition and Thermal Evaporator System – PLD-T is a high vacuum thin film deposition system enables to deposit different materials by both Pulsed Laser Deposition and so Thermal Evaporation technique. It can deposit complex materials and crystalline structures onto substrates with very little setup involved. Pulsed Laser Deposition technique leads to efficient, none-thermal ablation and preserves the stoichiometry of the target materials. By applying this method it could deposit materials such as nitrides, oxides, super lattices, polymers, and composites |
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Features
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Thermal Evaporation Sources (Boat/Basket/Coil) The Pulsed Laser Deposition System can be fitted with three independent heat resistance thermal evaporation sources. The good design of the evaporation source holder causes no contamination transfer from sources materials to other materials. The length of source holders can be adjusted in the range of 5~10 cm which meets the costumer requirement. |
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Target Manipulator PLD is equipped with a multi-target manipulator which includes three target with diameter of 2cm. Targets are in standard size and all of our target manipulators are motorized and includes target rotation. |
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Pumping Speed
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90 l/s 350 l/s |
Ultimate Pressure | 7 x10-6 Torr 7×10-7 Torr |