反向散射電子（BSEs）是主電子束與樣品之間的引起相互作用所產生的高能量電子。
- 4 通道半導體型 BSE 探測器
- 清晰的金屬邊界影像
- 比 SE 探測器具有更多的立體影像
- EM 系列和 CX 系列均為選配配置
- 透過數位板輕鬆控制軟體。
- 使用 LV 模式拍攝的無濺鍍試樣清晰影像。
| 解析度 | 10nm |
| 通道 | 四通道固定型 |
| 圖像 | 形貌和構圖功能，雙顯示幕 |
Backscattered electrons (BSEs) are high-energy electrons generated as a result of elastic interactions between the primary electron beam and the sample.
- 4 Channel Semiconductor Type BSE Detector
- Clear Image about the boundary of metal
- Much Stereoscopic Image than SE detector
- Optional for both of EM Series and CX Series
- Easy controlled S/W by Digital board
- Clear Image of Non-Coating Specimen with LV mode
| Resolution | 10nm |
| Channels | 4 channels solid type |
| Image | Topography and composition functions, Dual display |